Advanced Materials

Ionic Gel Modulation of RKKY Interactions in Synthetic Anti-Ferromagnetic Nanostructures for Low Power Wearable Spintronic Devices

Author Qu Yang

Qu Yang, Ziyao Zhou*, Liqian Wang, Hongjia Zhang, Yuxin Cheng, Zhongqiang Hu, Bin Peng, and Ming Liu*, Ionic Gel Modulation of RKKY Interactions in Synthetic Anti-Ferromagnetic Nanostructures for Low Power Wearable Spintronic Devices, Advanced Materials

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Vedio Abstract: Synthetic Anti-Ferromagnetic Nanostructures for Low Power Wearable Spintronic Devices

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Abstract

To meet the demand of developing compatible and energy-ef cient exible spintronics, voltage manipulation of magnetism on soft substrates is in demand. Here, a voltage tunable exible eld-effect transistor structure by ionic gel (IG) gating in perpendicular synthetic anti-ferromagnetic nanostruc- ture is demonstrated. As a result, the interlayer Ruderman–Kittel–Kasuya– Yosida (RKKY) interaction can be tuned electrically at room temperature. With a circuit gating voltage, anti-ferromagnetic (AFM) ordering is enhanced or converted into an AFM–FM intermediate state, accompanying with the dynamic domain switching. This IG gating process can be repeated stably at different curvatures, con rming an excellent mechanical property. The IG- induced modi cation of interlayer exchange coupling is related to the change of Fermi level aroused by the disturbance of itinerant electrons. The voltage modulation of RKKY interaction with excellent exibility proposes an appli- cation potential for wearable spintronic devices with energy ef ciency and ultralow operation voltage.